Experimental Study of the Intrinsic and Extrinsic Transport Properties of Graphite and Multigraphene Samples

This work deals with the intrinsic and extrinsic properties of the graphene layers inside the graphite structure, in particular the influence of defects and interfaces. We discuss the evidence for ballistic transport found in mesoscopic graphite samples and the possibility to obtain the intrinsic carrier density of graphite, without the need of free parameters or arbitrary assumptions. The influence of internal interfaces on the transport properties of bulk graphite is described in detail. We show that in specially prepared multigraphene samples the transport properties show clear signs for the existence of granular superconductivity within the graphite interfaces. We argue that the superconducting-insulator or metal-insulator transition (MIT) reported in the literature for bulk graphite is not intrinsic of the graphite structure but it is due to the influence of these interfaces. Current-Voltage characteristics curves reveal Josephson-like behavior at the interfaces with superconducting critical temperatures above 150K.Comment: 26 pages, 15 figures. To be published in "Graphene, Book 2" by Intech, Open Access Publisher 2011, ISBN: 979-953-307-180-

Ballistic transport at room temperature in micrometer size multigraphene

The intrinsic values of the carriers mobility and density of the graphene layers inside graphite, the well known structure built on these layers in the Bernal stacking configuration, are not well known mainly because most of the research was done in rather bulk samples where lattice defects hide their intrinsic values. By measuring the electrical resistance through microfabricated constrictions in micrometer small graphite flakes of a few tens of nanometers thickness we studied the ballistic behavior of the carriers. We found that the carriers' mean free path is micrometer large with a mobility $\mu \simeq 6 \times 10^6$cm$^2$/Vs and a carrier density $n \simeq 7 \times 10^8$cm$^{-2}$ per graphene layer at room temperature. These distinctive transport and ballistic properties have important implications for understanding the values obtained in single graphene and in graphite as well as for implementing this last in nanoelectronic devices.Comment: 6 pages, 6 figure

Uncompensated magnetization and exchange-bias field in La0.7_{0.7}Sr0.3_{0.3}MnO3_3/YMnO3_3 bilayers: The influence of the ferromagnetic layer

We studied the magnetic behavior of bilayers of multiferroic and nominally antiferromagnetic o-YMnO$_3$ (375~nm thick) and ferromagnetic La$_{0.7}$Sr$_{0.3}$MnO$_3$ and La$_{0.67}$Ca$_{0.33}$MnO$_3$ ($8 \ldots 225~$nm), in particular the vertical magnetization shift $M_E$ and exchange bias field $H_E$ for different thickness and magnetic dilution of the ferromagnetic layer at different temperatures and cooling fields. We have found very large $M_E$ shifts equivalent to up to 100\% of the saturation value of the o-YMO layer alone. The overall behavior indicates that the properties of the ferromagnetic layer contribute substantially to the $M_E$ shift and that this does not correlate straightforwardly with the measured exchange bias field $H_E$.Comment: 10 figures, 8 page

On the low-field Hall coefficient of graphite

We have measured the temperature and magnetic field dependence of the Hall coefficient ($R_{\rm H}$) in three, several micrometer long multigraphene samples of thickness between $\sim 9~$to $\sim 30$~nm in the temperature range 0.1 to 200~K and up to 0.2~T field. The temperature dependence of the longitudinal resistance of two of the samples indicates the contribution from embedded interfaces running parallel to the graphene layers. At low enough temperatures and fields $R_{\rm H}$ is positive in all samples, showing a crossover to negative values at high enough fields and/or temperatures in samples with interfaces contribution. The overall results are compatible with the reported superconducting behavior of embedded interfaces in the graphite structure and indicate that the negative low magnetic field Hall coefficient is not intrinsic of the ideal graphite structure.Comment: 10 pages with 7 figures, to be published in AIP Advances (2014

Length dependence of the resistance in graphite: Influence of ballistic transport

Using a linear array of voltage electrodes with a separation of several micrometers on a $20$nm thick and 30 $\mu$m long multigraphene sample we show that the measured resistance does not follow the usual length dependence according to Ohm's law. The deviations can be quantitatively explained taking into account Sharvin-Knudsen formula for ballistic transport. This allows us to obtain without free parameters the mean free path of the carriers in the sample at different temperatures. In agreement with recently reported values obtained with a different experimental method, we obtain that the carrier mean free path is of the order of $\sim 2 \mu$m with a mobility $\mu \sim 10^7$cm$^{2}$V$^{-1}$s$^{-1}$. The results indicate that the usual Ohm's law is not adequate to calculate the absolute resistivity of mesoscopic graphite samples.Comment: 5 pages, 5 figures, in press in Journal of Applied Physics (2012

Evidence for semiconducting behavior with a narrow band gap of Bernal graphite

We have studied the resistivity of a large number of highly oriented graphite samples with areas ranging from several mm$^2$ to a few $\mu$m$^2$ and thickness from $\sim 10$nm to several tens of micrometers. The measured resistance can be explained by the parallel contribution of semiconducting graphene layers with low carrier density $< 10^9$ cm$^{-2}$ and the one from metallic-like internal interfaces. The results indicate that ideal graphite with Bernal stacking structure is a narrow-gap semiconductor with an energy gap $E_g \sim 40$meV.Comment: 14 pages, 4 Figures, to be published in New Journal of Physics (in press, 2012